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Jul 04, 2023

ETMOS project to develop ultrafast Diodes and Transistors ...

Silicon carbide (SiC) and group-III nitrides (GaN, AlN, InN and their alloys) play a crucial role in energy-efficient power conversion, high-frequency electronics and optoelectronics. By combining the

Silicon carbide (SiC) and group-III nitrides (GaN, AlN, InN and their alloys) play a crucial role in energy-efficient power conversion, high-frequency electronics and optoelectronics. By combining the mature technology of these wide-bandgap semiconductors with the exceptional properties of 2D materials, like graphene and transition metal dichalcogenides (specifically molybdenum disulphide (MoS2)), researchers can develop ultra-fast diodes and transistors.

From April 2020 to March 2023, researchers from CNR-IMM (Italy), CNRS-CRHEA (France), IEE-SAS (Slovakia), MFA-EK (Hungary), and the University of Palermo (Italy) collaborated on the FLAG-ERA ETMOS project to build concept devices based on MoS2, SiC and gallium nitride (GaN).

The highlight of the ETMOS project was the development of MoS2/SiC and MoS2/GaN heterojunction diodes with excellent rectification properties. Tunable current injection was achieved by tailoring the doping of MoS2 or SiC (GaN) surfaces.

The ETMOS project has actively disseminated its scientific results through various means, including publishing them in peer-reviewed open access journals, participating in international conferences, and organising a symposium at the European Materials Research Society (EMRS) Fall Meeting 2022.

“The integration of 2D materials provides new functionalities to SiC and GaN, expanding the range of potential applications of these wide bandgap semiconductors. I expect that new market opportunities will be opened by this technology,” says CNR-IMM’s Research Director Filippo Giannazzo.

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